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   DSEP30-12CR 0400800200 600 1000 20 40 60 [ns] 80 trr 100 120 140 160 0.0001 0.001 0.01 0.1 1 10 0.0 0.2 0.4 0.6 0.8 04080120160 0.0 0.5 1.0 1.5 2.0 2.5 0 200 400 600 800 1000 0 10 20 [V] 30 40 0.2 0.3 0.4 0.5 0.6 0 400 800200 600 1000 0 5 10 [A] 15 20 25 1000 100 100 200 300 [nC] 400 500 600 700 800 02468 0 20 40 60 80 TVJ=100°C IF=100 A IF=60A IF=30A IF=15A IF=60A IF=30A IF=15A IRM Qrr IF= 60 A IF= 30 A IF= 15 A VFR tfr TVJ= 150°C TVJ= 100°C TVJ=25°C TVJ= 100°C VR=600 V TVJ=100°C VR= 600 V TVJ=100°C VR= 600 V IF [A] VF [V] Qr -diF/dt [A/μs] IRM -diF/dt [A/μs] Kf TVJ [°C] -diF/dt [A/μs] trr [μs] -diF/dt [A/μs] VFR t [s] ZthJC [K/W] Fig. 1 Forward current IF vs. VF Fig. 2 Reverse recovery charge Qr versus -diF /dt Fig. 3 Peak reverse current IRM versus -diF/dt Fig. 4 Dynamic parameters Qr,IRM versus TVJ Fig. 5 Recovery time trr versus -diF /dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Fig. 7 Transient thermal resistance junction to case Constants for ZthJC calculation: iRthi (K/W) t i (s) 1 0.08 0.0013 2 0.122 0.0097 3 0.116 0.037 4 0.23 0.07 5 0.052 0.45 IXYS reserves the right to change limits, conditions and dimensions. ? 2011 IXYS all rights reserved 20110201a Data according to IEC 60747and per diode unless otherwise specified |